Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires

نویسندگان

  • Jen-Bin Shi
  • Chih-Jung Chen
  • Ya-Ting Lin
  • Wen-Chia Hsu
  • Yu-Cheng Chen
  • Po-Feng Wu
چکیده

In this study, beta-In(2)S(3) nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, beta-In(2)S(3) nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the beta-In(2)S(3) nanowires is about 60 nm with the length of about 6-8 mum. Moreover, the aspect ratio of beta-In(2)S(3) nanowires is up to 117. An EDS analysis revealed the beta-In(2)S(3) nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the beta-In(2)S(3) nanowire is tetragonal polycrystalline. The direct band gap energy (E(g)) is 2.40 eV from the optical measurement, and it is reasonable with literature.

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عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2009